Gallium-doped zinc oxide enables 24.92%-efficient HJT solar cell

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Researchers developed indium-free transparent electrodes for silicon heterojunction solar cells using room-temperature reactive plasma deposition. By optimizing oxygen content, they achieved 24.92% conversion efficiency with silver-coated copper contacts.

Researchers have used room-temperature reactive plasma deposition to produce indium-free transparent electrodes for silicon heterojunction solar cells. Optimizing the oxygen content during deposition enabled a conversion efficiency of 24.92%, with silver-coated copper contacts. The post Gallium-doped zinc oxide enables 24.92%-efficient HJT solar cell appeared first on pv magazine Global.