Atom-scale model could help improve material growth for advanced electronics

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Penn State researchers refined an atom-scale model of how silicon carbide transitions from solid to vapor during crystal growth. The work could help manufacturers produce higher-quality materials for advanced electronics while reducing costly trial-and-error experiments.

Penn State researchers have refined an atom-scale model of how silicon carbide changes from a solid into vapor during crystal growth, work that could help manufacturers produce higher-quality material for advanced electronics while reducing costly trial-and-error experiments.